Automating RF PA device manufacturing to accelerate 5G wireless rollout
as published in Chip Scale Review
The successful rollout of 5G wireless depends on the deployment of a significant quantity of base stations with a higher density of radio frequency (RF) power amplifiers (PA) compared to the older 4G technology. Each 5G base station has more channels, and each channel needs one RF PA device. These devices are key components that boost the RF power signals in base stations.
Before the 5G era, silicon-based lateral double-diffused metal oxide semiconductor (Si-LDMOS) was the
main stream solution in the RF PA market for 4G long-term evolution (LTE) technology. Those devices are now regarded as almost commodities with a high level of technical maturity.
